Electron-phonon deformation potential interaction in core-shell Ge-Si and Si-Ge nanowires
نویسندگان
چکیده
منابع مشابه
Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...
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The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2015
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.91.075312